| PART |
Description |
Maker |
| VPP20-1000 |
VPP20-1000
|
TRIAD MAGNETICS
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| CMR1U-0110 CMR1U-10 CMR1U-02 CMR1U-06 CMR1U-04 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS
1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| SCA-4-10 |
Power Splitter/Combiner 4 Way-050з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiner 4 Way-0∑ 50з 5 to 1000 MHz
Power Splitter/Combiner 4 Way-0° 50?/a> 5 to 1000 MHz
|
MINI[Mini-Circuits]
|
| S574-1000-17 |
V.34 SRF. MNT. MODEM TRANSFORMERS S574-1000-17 and S574-1000-18
|
BEL[Bel Fuse Inc.]
|
| CS241020 |
Fast Recovery Single Diode Module 200 Amperes/1000 Volts 200 A, 1000 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| GBJ1500511 GBJ1510-BP |
15 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 15A 1000V GBJ 15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Components, Corp.
|
| MACP-009596-CA0160 MACP-009596-CA01TB |
5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.7 dB INSERTION LOSS-MAX ROHS COMPLIANT, CASE SM-22, 5 PIN
E-Series Coupler 5 to 1000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| SK012D S8025L SK055N |
12 A, 1000 V, SCR, TO-252
25 A, 800 V, SCR, TO-220AB
55 A, 1000 V, SCR, TO-263AB
|
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
